A ring oscillator circuit using a new type of transistors, silicon tunnel FETs, that are in principle operable at low voltage has been fabricated, and operating speed has been measured for the first ...
Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage.
In recent years, electronics engineers have been trying to identify semiconducting materials that could substitute for ...
Alexandra Boltasseva, left, Ron and Dotty Garvin Tonjes Distinguished Professor, and Vladimir Shalaev, Bob and Anne Burnett Distinguished Professor, in the Elmore Family School of Electrical and ...
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