A University at Buffalo team has proposed a new form of power MOSFET transistor that can handle incredibly high voltages with minimal thickness, heralding an efficiency increase in the power ...

For decades, the industry has relied on various power semiconductors to control and convert electrical power in an efficient manner. Power semis are ubiquitous, as they are found in adapters, ...

The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...

Designers of electronics and communications systems are constantly faced with the challenge of integrating greater functionality on less silicon area. Many of the system blocks – such as power ...

Improved metalisation is the key to cutting on-resistance in Zetex Gen5 transistors. Reverse blocking Zetex is promoting its PNP Gen5 devices for power switching positive rails in sub-3.3V ...

Properties of wide-bandgap materials, with a focus on SiC. How a bridgeless totem-pole topology can help cut losses. A breakdown of the half-bridge inverter topology The efficiency of power-conversion ...

The chipmaker will shed light on a series of changes it's making to transistors that ideally will keep a lid on the growing problem of power consumption. Michael Kanellos is editor at large at CNET ...

The first step in designing a microwave frequency power amplifier monolithic microwave integrated circuit on a given GaN foundry process is to select the transistor size and bias, writes Liam Devlin.

OTTAWA, ON / ACCESSWIRE / March 9, 2021 / GaN Systems, the global leader in GaN (gallium nitride) power transistors, today announced that its low current, high volume GaN transistors have fallen below ...