Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

While many research efforts are underway to develop active devices that can function in the challenging terahertz spectrum, others are leapfrogging to try to get some devices operate into the ...

Add Yahoo as a preferred source to see more of our stories on Google. MIT engineers have developed a magnetic transistor that could pave the way for smaller, faster, and more efficient electronics. By ...

A new gallium nitride (GaN) solution claims to take the technology well over its current limitations of 100 kHz to facilitate hard switching at high voltages for motor drive systems serving ...

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

Gallium nitride (GaN) is an ideal material for applications requiring high switching speeds and minimal power losses. While ...

Unpacking the challenges with high-voltage power conversion and how SiC fits in. The pivotal advantages of SiC over traditional silicon in next-gen power converters. Rethinking circuit design for ...

Organic transistors hold promise for wearable electronics, biosensors to measure sodium or other ions in blood, and other applications. But their lifetimes and switching speeds are limited. Now, ...

Metal-oxide semiconductor field-effect transistors (MOSFETs) see common use in applications ranging from the very small (like CPU transistors) to very large (power) switching applications. Although ...