KAWASAKI, Japan, November 12, 2024--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for ...
In recent years, MOSFETs have benefited from huge investments in technology and promotion alike, overshadowing bipolar devices to the degree that many designers view bipolars as old technology.
A type of metal oxide semiconductor field-effect transistor (MOSFET) used to switch large amounts of current. Power MOSFETs use a vertical structure with source and drain terminals at opposite sides ...
A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a fundamental building block of modern electronics. It is a field-effect transistor (FET) where the voltage applied to a terminal (gate) ...
Cree Inc., a maker of silicon carbide (SiC) power devices, has introduced a new Cree MOSFET design kit that includes all of the components needed to evaluate Cree MOSFET and Schottky diode performance ...
There are many types of switch-mode power supply (SMPS) transistors to choose from today. Two of the more popular versions are the metal-oxide semiconductor field effect transistor (MOSFET) and the ...
Durham, NC. Wolfspeed has expanded its C3M platform through the introduction of a 1,200-V, 75-mΩ MOSFET in its recently released low-inductance discrete packaging. The new device simplifies designs ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results