The next generation of high-bandwidth memory, HBM4, was widely expected to require hybrid bonding to unlock a 16-high memory ...
Advanced packaging can be an alphabet soup of possible approaches, from heterogenous integration of multiple die types into a single package, to three-dimensional stacking of multiple dies on top of ...
Researchers have developed a stacking technology for a magneto-resistive random access memory (MRAM) to separately form a single-crystal tunnel magnetoresistive (TMR) thin film and then bond it to a ...
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MIT's chip stacking breakthrough could cut energy use in power-hungry AI processes
Data doesn’t have to travel as far or waste as much energy when the memory and logic components are closer together.
(Nanowerk News) The magnetic, conductive and optical properties of complex oxides make them key to components of next-generation electronics used for data storage, sensing, energy technologies, ...
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