FinFET technology enabled lower leakage, reduced short-channel effects, and better performance at reduced voltages. It successfully extended CMOS scaling from the 22nm node through the 7nm generation ...
TL;DR: Intel's 18A process node, set for tape-out in 1H 2025, aims to compete with TSMC, marking a significant comeback for Intel in the semiconductor industry. Featuring BSPDN, RibbonFET GAA ...
Intel Foundry Services (IFS) and leading semiconductor IP vendor Arm have jointly announced a design technology co-optimization (DTCO) agreement to develop multiple generations of Arm-based processor ...
Global internet traffic is growing exponentially, with no sign of slowing, and this demand is driving the evolution of the semiconductor industry. The appetite for more and more data requires sensors ...
TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced the development of highly stackable oxide-semiconductor channel transistors that will enable the ...
The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...
The cost of building new chips keeps rising every node -- so much so that by 3nm, there might be precious few companies that can afford new chips at all. Share on Facebook (opens in a new window) ...
TL;DR: TSMC's next-generation 2nm process has achieved over 60% production yields, surpassing Samsung's 40%, enabling mass production for clients like Apple, NVIDIA, and Qualcomm. Utilizing advanced ...
The six stacks of semiconductors for hybrid complementary metal-oxide semiconductor (CMOS) microchips advances miniaturization and topples the previous record of two stack King Abdullah University of ...
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