The SCT2120AF is a new addition to ROHM Semiconductor’s series of SiC Power Devices. The SCT2120AF is an N-channel SiC power MOSFET that has a drain-source voltage of 650 V and a low on-state ...
There remains little doubt that silicon carbide, a so-called third-generation, wide-bandgap semiconductor is fulfilling its long-known potential, with the automotive industry having been the very ...
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