Electronic devices power everyday life, from smartphones to medical sensors. Yet, as these gadgets grow in number, so does the mounting challenge of electronic waste, or e-waste. Physically transient ...

Low-Power Double Data Rate (LPDDR) emerged as a specialized high performance, low power memory for mobile phones. Since its first release in 2006, each new generation of LPDDR has delivered the ...

MRAM is one of the most promising emerging memory technologies we have, as it can theoretical improve on nearly every metric of existing DRAM and SRAM technologies. However, MRAM requires significant ...

A research team led by Kyushu University has developed a new fabrication method for energy-efficient magnetic random-access memory (MRAM) using a new material called thulium iron garnet (TmIG) that ...

A computer-memory device has been developed that can store one bit of information for 24 hours at 600 °C. This could advance computing in extreme environments, such as the scorching surface of Venus 1 ...

QLC UFS offers a higher bit density than traditional TLC UFS, making it suitable for mobile applications that require higher storage capacities. Advancements in ...

(Nanowerk Spotlight) The human brain processes complex information while consuming merely the power of a dim light bulb. This remarkable efficiency stems from synapses, the connections between brain ...

Computer memory could one day withstand the blazing temperatures in fusion reactors, jet engines, geothermal wells and sweltering planets using a new solid-state memory device developed by a team of ...

SAN JOSE, Calif.--(BUSINESS WIRE)--KIOXIA America, Inc. today announced that it has begun sampling new Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices, reinforcing its leadership in ...

With transistors and logic gates as our basic building blocks, we can begin to construct the actual circuits that make up computer memory. One of the simplest memory circuits is the AND gate, which ...

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling (1) new Universal Flash Storage (2) (UFS) Ver. 4.1 embedded memory devices ...