Given the maturity of MOSFETs, selecting one for your next design may seem deceptively simple. Engineers are familiar with the figures of merit on a MOSFET data sheet. Selecting a MOSFET requires the ...

This application note presents the MOSFET/IGBT drivers theory and its applications. The document describes an introduction of the MOSFET and IGBT technology, the types of drivers, isolation techniques ...

International Rectifier announces an automotive DirectFET2 power MOSFET chipset optimized for dc-dc applications used in internal combustion engine (ICE) cars, hybrid, and electric vehicles.

Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...

Cree, one of the market leaders in silicon carbide (SiC) power electronics, introduced new Wolfspeed 650V SiC MOSFETs, which are envisioned for applications where efficiency is a key priority, ...

ROHM has developed a 30V N-channel MOSFET, the AW2K21, in a common-source configuration that achieves an ON-resistance of 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package. The AW2K21 has adopted a ...

Santa Clara, CA and Kyoto, Japan, July 08, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the AW2K21, a 30V N-channel MOSFET in a common-source configuration that ...

DUBLIN--(BUSINESS WIRE)--The "IGBT and Super Junction MOSFET - Global Strategic Business Report" report has been added to ResearchAndMarkets.com's offering. The global market for IGBT and Super ...

DURHAM, N.C.--(BUSINESS WIRE)--In a move that heralds a performance revolution in energy efficient power electronics, Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, ...