technologynetworks

Germanium–Tin Transistor Developed as an Alternative to Silicon

Scientists at Forschungszentrum Jülich have fabricated a new type of transistor from a germanium–tin alloy that has several advantages over conventional switching elements. Charge carriers can move ...
Nanowerk

Back to the roots: Germanium outperforms silicon in energy efficient transistors with n- und p- conduction

(Nanowerk News) A team of scientists from the Nanoelectronic Materials Laboratory (NaMLab gGmbH) and the Cluster of Excellence Center for Advancing Electronics Dresden (cfaed) at the Dresden ...
Hackaday

Retrotechtacular: Manufacturing Philco Germanium Transistors

There was a time when all major corporations maintained film production departments to crank out public relations pieces, and the electronic industry was no exception. Indeed, in the sea-change years ...
Nature

Silicon-Germanium Heterojunction Bipolar Transistors and On-Wafer Measurement Techniques

Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) have emerged as a cornerstone in high-frequency electronics owing to their enhanced carrier mobility and reduced noise. The integration ...
PRIMETIMER on MSN

How could NASA’s electronics survive the extreme cold and radiation of Europa? New SiGe technology explained

NASA’s new silicon-germanium (SiGe) electronics can operate at -180°C and withstand 5 Mrad radiation, enabling autonomous exploration of Europa and other ocean worlds.
EurekAlert!

New germanium-tin transistor as alternative to silicon

Over the past 70 years, the number of transistors on a chip has doubled approximately every two years – according to Moore’s Law, which is still valid today. The circuits have become correspondingly ...
idw

Germanium outperforms silicon in energy efficient transistors with n- und p- conduction

NaMLab and cfaed reached an important breakthrough in the development of energy-efficient electronic circuits using transistors based on germanium A team of scientists from the Nanoelectronic ...
EurekAlert!

Germanium outperforms silicon in energy efficient transistors with n- und p- conduction

A team of scientists from the Nanoelectronic Materials Laboratory (NaMLab gGmbH) and the Cluster of Excellence Center for Advancing Electronics Dresden (cfaed) at the Dresden University of Technology ...