A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

Field-effect transistor (FET) devices based on functionalized nanocarbon materials are a promising technology for biomolecular sensing applications. Nanocarbon-based field-effect transistor (NC-FET) ...

Technology is about to undergo a revolution that will alter how devices are utilized. A group of brilliant scientists from the Institute for Basic Science (IBS) in South Korea, led by the esteemed ...

Beyond-silicon technology demands ultra-high-performance field-effect transistors (FETs). Transition metal dichalcogenides (TMDs) provide an ideal material platform, but the device performances such ...

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that, beginning January 21, it will start shipping samples of four new trench silicon carbide metal-oxide-semiconductor field-effect ...

Using a new fabrication technique, NIMS has developed a diamond field-effect transistor (FET) with high hole mobility, which allows reduced conduction loss and higher operational speed. This new FET ...

The formula for a perovskite compound is typically expressed as ABX3. These are crystalline structures that bond two cations ("A" and "B", divalent metal ion) to an anion ("X"); the "B" atoms tend to ...

A revolution in technology is on the horizon, and it’s poised to change the devices that we use. Under the distinguished leadership of Professor LEE Young Hee, a team of visionary researchers from the ...