Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...

Square-root-calculating circuits find wide use in instrumentation and measurement systems for such tasks as calculating the rms (root-mean-square) value of an arbitrary waveform, for example. Hence, ...

Below 28 nm, maximum device length limitations mean that analog designers often need to connect multiple short-length MOSFETs in series to create long-channel devices. These series-connected devices ...

For the PDF version of this article, click here. Protecting power transistors against overcurrent failure has always been a challenging issue in power circuit design. In order to protect against even ...

The power transistor must be chosen to provide fast response while also withstanding high power dissipation. Several electrical and thermal characteristics must be considered: 1. An array of N current ...

Transistors are three-terminal semiconductor devices. One terminal controls electrical resistance or current flow between the other two terminals, giving transistors a valvelike operation. Transistors ...