This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...

Also called a "bipolar junction transistor" (BJT), it is one of two major transistor categories; the other is "field-effect transistor" (FET). Although the first transistor was bipolar and the first ...

This course presents in-depth discussion and analysis of metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, ...

A transistor – a word blend of "transfer" and "resistor" – is a fundamental component of today's advanced electronics. Essentially, a transistor, as one of the foundational elements of modern ...

The invention of the transistor in 1947 by Shockley, Bardeen and Brattain at Bell Laboratories ushered in the age of microelectronics and revolutionized our lives. First, so-called bipolar transistors ...

The first transistor was successfully demonstrated at Bell Laboratories in Murray Hill, New Jersey, in 1947. This three-terminal device has spawned many of the electronics devices that make possible ...

It used to be a rite of passage to be able to do the math necessary to design various bipolar transistor amplifier configurations. This doesn’t come up as often as it used to, but it is still a good ...